Part Number | 2N7000G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | UTC |
Description | MOSFET N-CH 60V 0.2A TO92-3 |
Series | - |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 200mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 1W (Tc) |
Rds On (Max) @ Id, Vgs | 5 Ohm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-92-3 |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Image |
2N7000G
UTC
40728
0.79
Heisener Electronics Limited
2N7000-G
UTC/
1797
1.9025
ROSSONIX CO.,LTD
2N7000G
UT
8000
3.015
HK GRONICE ELECTRONIC TECHNOLOGY LIMITED
2N7000-G
UTC()
950
4.1275
Unit Electronics Co., Limited
2N7000G
UTCYW
1010
5.24
CIS Ltd (CHECK IC SOLUTION LIMITED)